Effect of rf bias on the film property of amorphous silicon oxide films deposited by plasma enhanced chemical vapor deposition

Akihiro Yamamoto

Presentation information

Poster Session

H. Innovative Materials Processing for Sustainable Society » [H-2] Plasma-Based Synthesis, Processing and Characterization of Materials for Energy and Environment

[H2-PR18] Slot 18

Thu. Dec 16, 2021 6:30 PM - 8:30 PM H2-PR18 (G403-404)

6:30 PM - 8:30 PM

[H2-PR18-26] Effect of rf bias on the film property of amorphous silicon oxide films deposited by plasma enhanced chemical vapor deposition

*Akihiro Yamamoto¹, Kohei Abe¹, Iori Nagao¹, Michihiro Otaka¹, Daisuke Yamashita¹, Kunishiro Kamataki¹, Takamasa Okumura¹, Naho Itagaki¹, Kazunori Koga^1,2, Masaharu Shiratani¹ (1. Kyushu Univ. Info. sci. and Electrical Engineering (Japan), 2. National Inst. of Natural Sci. (Japan))

Keywords:Plasma CVD, CCP, rf bias

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