Size-Controlled Square-Grain Formation of Poly-Si Films Crystallized by Laser Annealing with Intensity Distribution, and Electrical Properties of the Poly-Si TFTs

Toru Okatsugi

Presentation information

Oral Session

H. Innovative Materials Processing for Sustainable Society » [H-4] Smart Laser Processing for Green Technologies

[H4-O7] Slot 07

Wed. Dec 15, 2021 2:30 PM - 6:00 PM Room S (G320)

Chair: Nilesh J. Vasa (Indian Institute of Technology Madras), Siti Rahmah Aid (Universiti Teknologi Malaysia)

4:00 PM - 4:20 PM

[H4-O7-05] Size-Controlled Square-Grain Formation of Poly-Si Films Crystallized by Laser Annealing with Intensity Distribution, and Electrical Properties of the Poly-Si TFTs

*Toru Okatsugi¹, Takahiro Nagano¹, Akira Mizutani², Keita Katayama¹, Daisuke Nakamura¹, Hiroshi Ikenoue^1,2, Tetsuya goto³ (1. Graduate School of Information Science and Electrical Engineering, Kyushu Univ. (Japan), 2. Department of Gigaphoton Next GLP, Kyushu Univ (Japan), 3. New Industry Creation Hatchery Center, Tohoku Unive (Japan))

Keywords:Low-temperature poly-Si, Thin-film transistor, Excimer laser annealing

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