[H4-O7] Slot 07

[H4-O7-05] Size-Controlled Square-Grain Formation of Poly-Si Films Crystallized by Laser Annealing with Intensity Distribution, and Electrical Properties of the Poly-Si TFTs

*Toru Okatsugi¹, Takahiro Nagano¹, Akira Mizutani², Keita Katayama¹, Daisuke Nakamura¹, Hiroshi Ikenoue^1,2, Tetsuya goto³ (1. Graduate School of Information Science and Electrical Engineering, Kyushu Univ. (Japan), 2. Department of Gigaphoton Next GLP, Kyushu Univ (Japan), 3. New Industry Creation Hatchery Center, Tohoku Unive (Japan))

キーワード：Low-temperature poly-Si, Thin-film transistor, Excimer laser annealing