Development of InGaP devices with a born converter layer for neutron detection

Yasuki Okuno

Presentation information

Oral Session

H. Innovative Materials Processing for Sustainable Society » [H-5] Innovative Material Technologies Utilizing Ion Beams

[H5-O8] Slot 08

Thu. Dec 16, 2021 9:00 AM - 12:00 PM Room H (G420)

Chair: Kazuhiro Yasuda (Kyushu University), Norito Ishikawa (JAEA)

10:15 AM - 10:45 AM

[H5-O8-04 (Symposium Invited)] Development of InGaP devices with a born converter layer for neutron detection

*Yasuki Okuno¹, Mitsuru Imaizumi², Tomohiro Kobayashi³, Takahiro Makino⁴, Shin-ichiro Sato⁴, Takeshi Ohshima⁴ (1. Tohoku Univ. (Japan), 2. JAXA (Japan), 3. RIKEN (Japan), 4. QST (Japan))

Keywords:Neutron detection, Ion beam, InGaP, Semiconductor, Radiation induced current

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