*Haruki Osawa1, Yuji Iwasawa1, Aikawa Shinya1 (1. Kogakuin Univ. (Japan))
Session information
Late Breaking News
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[D-L204] Late Breaking News
Tue. Dec 12, 2023 6:30 PM - 8:30 PM Poster (Annex)
*Ayumu Nodera1, Ryota Kobayashi1, Tsubasa Kobayashi1, Shinya Aikawa1 (1. Kogakuin Univ. (Japan))
*Yolanda Rati1, Yasni Novi Hendri1, Jessie Manopo1, Riri Jonuarti2, Resti Marlina3, Robi Kurniawan4, Yudi Darma1 (1. Inst. Teknologi Bandung (Indonesia), 2. Univ. Negeri Padang (Indonesia), 3. National Res. and Innovation Agency (Indonesia), 4. Univ. Negeri Malang (Indonesia))
*Tsubasa Kobayashi1, Takuma Kawaguchi1, Kanta Kibishi1, Shinya Aikawa1 (1. Kogakuin University (Japan))
*Jiali Liu1,2, Sheng Ma1,2, Shanshan Yuan3, Yizhe Wang3, Yuhang Zhang1,2, Zhen zhao1,2, Zouyouwei Lu1,2, Dong Li1, Yue Liu1,2, Feng Wu1, Jihu Lu1,2, Hua Zhang1,2,4, Haitao Yang1,2,5, Fang Zhou1,2,4, Zian Li3, Xiaoli Dong1,2,4, Zhongxian Zhao1,2,4 (1. Beijing National Lab. for Condenced Matter Physics, Inst. of physics, Chinese Academy of Sci.s (China), 2. School of Physical Sci.s, Univ. of Chinese Academy of Sci.s (China), 3. School of Physical Sci.s and Tech., Guangxi Univ. (China), 4. Songshan Lake Materials Lab. (China), 5. CAS Center for Excellence in Topological Quantum Computation, Univ. of Chinese Academy of Sci.s (China))
*Takayuki Ohta1, Miyuki Nishimura1 (1. Meijo Univ. (Japan))
Dong Li1, *Yue Liu1,2, Zouyouwei Lu1,2, Peiling Li1, Yuhang Zhang1,2, Sheng Ma1,2, Jiali Liu1,2, Jihu Lu1,2, Hua Zhang1,2,3, Guangtong Liu1,2,3, Fang Zhou1,2,3, Xiaoli Dong1,2,3,4, Zhongxian Zhao1,2,3,4 (1. Beijing National Lab. for Condensed Matter Physics, Inst. of Physics, Chinese Academy of Sciences (China), 2. School of Physical Sciences, Univ. of Chinese Academy of Sciences (China), 3. Songshan Lake Materials Lab. (China), 4. Key Lab. for Vacuum Physics, Univ. of Chinese Academy of Sciences (China))
*Jihu Lu1,2, Zouyouwei Lu1,2, Ziyi Liu1, Hua Zhang1, Xiaoli Dong1, Zhongxian Zhao1 (1. Institute of Physics, Chinese Academy of Sciences (China), 2. University of Chinese Academy of Sciences (China))
*Moonsang Lee1 (1. Inha University (Korea))
[D-L204-10] Memory Characteristics of Antimony-doped Indium Aluminum Zinc Oxide Thin Film Transistor
*Hiroki Sekiya1, Ryoichiro Hayasaka1, Kenta Tanino1, Taku Hanna1, Motoshi Kobayashi1 (1. ULVAC, Inc. (Japan))
*Salsabila Amanda Putri1, Naoya Yamaguchi2, M. Adhib Ulil Absor3, Rifky Syariati2, Fumiyuki Ishii2 (1. Graduate School of Natural Science and Technology, Kanazawa University (Japan), 2. Nanomaterials Research Institute (NanoMaRi), Kanazawa University (Japan), 3. Department of Physics, Universitas Gadjah Mada, Yogyakarta (Indonesia))