[D-L204-01] Electrical property improvement of Pt-free TiO_x-based ReRAM devices using ultrathin SiO_x interlayers

*Haruki Osawa¹, Yuji Iwasawa¹, Aikawa Shinya¹ (1. Kogakuin Univ. (Japan))

[D-L204-02] Correlation between CO₂ sensitivity and Zn concentration in InZnO thin-film transistors

*Ayumu Nodera¹, Ryota Kobayashi¹, Tsubasa Kobayashi¹, Shinya Aikawa¹ (1. Kogakuin Univ. (Japan))

[D-L204-03] Strong UV Emission of Carbon-doped ZnO Petal-Like Sheets Grown by Spin Coating - Confocal RF Sputtering

*Yolanda Rati¹, Yasni Novi Hendri¹, Jessie Manopo¹, Riri Jonuarti², Resti Marlina³, Robi Kurniawan⁴, Yudi Darma¹ (1. Inst. Teknologi Bandung (Indonesia), 2. Univ. Negeri Padang (Indonesia), 3. National Res. and Innovation Agency (Indonesia), 4. Univ. Negeri Malang (Indonesia))

[D-L204-04] Fabrication of SnO Thin Film by Sputtering in Low-Concentration Reducing H₂ Atmosphere

*Tsubasa Kobayashi¹, Takuma Kawaguchi¹, Kanta Kibishi¹, Shinya Aikawa¹ (1. Kogakuin University (Japan))

[D-L204-05] Hydrothermally Obtaining Superconductor Single Crystal of FeSe_0.2Te_0.8 without Interstitial Fe

*Jiali Liu^1,2, Sheng Ma^1,2, Shanshan Yuan³, Yizhe Wang³, Yuhang Zhang^1,2, Zhen zhao^1,2, Zouyouwei Lu^1,2, Dong Li¹, Yue Liu^1,2, Feng Wu¹, Jihu Lu^1,2, Hua Zhang^1,2,4, Haitao Yang^1,2,5, Fang Zhou^1,2,4, Zian Li³, Xiaoli Dong^1,2,4, Zhongxian Zhao^1,2,4 (1. Beijing National Lab. for Condenced Matter Physics, Inst. of physics, Chinese Academy of Sci.s (China), 2. School of Physical Sci.s, Univ. of Chinese Academy of Sci.s (China), 3. School of Physical Sci.s and Tech., Guangxi Univ. (China), 4. Songshan Lake Materials Lab. (China), 5. CAS Center for Excellence in Topological Quantum Computation, Univ. of Chinese Academy of Sci.s (China))

[D-L204-06] Effect of peak power density on deposition of TiO₂ film using high-power pulsed magnetron sputtering

*Takayuki Ohta¹, Miyuki Nishimura¹ (1. Meijo Univ. (Japan))

[D-L204-07] Quasi-Two-Dimensional Nature of High-T_c Superconductivity in Iron-Based (Li,Fe)OHFeSe

Dong Li¹, *Yue Liu^1,2, Zouyouwei Lu^1,2, Peiling Li¹, Yuhang Zhang^1,2, Sheng Ma^1,2, Jiali Liu^1,2, Jihu Lu^1,2, Hua Zhang^1,2,3, Guangtong Liu^1,2,3, Fang Zhou^1,2,3, Xiaoli Dong^1,2,3,4, Zhongxian Zhao^1,2,3,4 (1. Beijing National Lab. for Condensed Matter Physics, Inst. of Physics, Chinese Academy of Sciences (China), 2. School of Physical Sciences, Univ. of Chinese Academy of Sciences (China), 3. Songshan Lake Materials Lab. (China), 4. Key Lab. for Vacuum Physics, Univ. of Chinese Academy of Sciences (China))

[D-L204-08] New intercalated FeSe-based high-temperature superconductor synthesized electrochemically

*Jihu Lu^1,2, Zouyouwei Lu^1,2, Ziyi Liu¹, Hua Zhang¹, Xiaoli Dong¹, Zhongxian Zhao¹ (1. Institute of Physics, Chinese Academy of Sciences (China), 2. University of Chinese Academy of Sciences (China))

[D-L204-09] Accelerated learning in III-V compound semiconductor artificial photonic synaptic devices

*Moonsang Lee¹ (1. Inha University (Korea))

[D-L204-10] Memory Characteristics of Antimony-doped Indium Aluminum Zinc Oxide Thin Film Transistor

*Hiroki Sekiya¹, Ryoichiro Hayasaka¹, Kenta Tanino¹, Taku Hanna¹, Motoshi Kobayashi¹ (1. ULVAC, Inc. (Japan))

[D-L204-11] First-Principles Study of Spin-Splitting and Electric Dipole Moment in Two-Dimensional Janus WSSe and Related Materials

*Salsabila Amanda Putri¹, Naoya Yamaguchi², M. Adhib Ulil Absor³, Rifky Syariati², Fumiyuki Ishii² (1. Graduate School of Natural Science and Technology, Kanazawa University (Japan), 2. Nanomaterials Research Institute (NanoMaRi), Kanazawa University (Japan), 3. Department of Physics, Universitas Gadjah Mada, Yogyakarta (Indonesia))

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