Oral Session

S. Co-Sponsored Topics » [S-2] 9th International Symposium on Transparent Conductive Materials & 13th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TCM-TOEO 2023)

[S2-O303] Oral 303

2023年12月13日(水) 16:30 〜 18:30 Session 1 (Room C-1)

Chair: Xuedong Bai (Institute of Physics, Chinese Academy of Sciences), Marius Grundmann (Universität Leipzig)

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16:30 〜 17:00

[S2-O303-01 (Symposium Invited)] Ferroelectric-polarization-enhanced Oxide Thin Film Transistors for Multi-mode Sensing

*Guodong Zhu¹, Qun Zhang¹ (1. Fudan University (China))

17:00 〜 17:15

[S2-O303-02] Scalable, Near Room Temperature Processed Indium Oxide and Tellurium Ultrathin Films for Complementary Metal-Oxide Semiconductor Electronics

*Chun Yuen Ho^1,2,3, I. K. M. Reaz Rahman^1,2, Shu Wang^1,2,4, Morten Madsen³, Ali Javey^1,2 (1. Electrical Engineering and Computer Sciences, Univ. of California, Berkeley (United States of America), 2. Materials Sciences Division, Lawrence Berkeley National Lab. (United States of America), 3. Centre for Advanced Photovoltaics and Thin-Film Energy Devices, Mads Clausen Inst., Univ. of Southern Denmark (Denmark), 4. Department of Materials Sci. and Engineering, Univ. of California, Berkeley (United States of America))

17:15 〜 17:30

[S2-O303-03] Room Temperature-Grown Highly Oriented p-Type Nanocrystalline Tellurium Thin-Films Transistors for Large-Scale CMOS circuits

*Jiyong Lee¹ (1. Sungkyunkwan University (Korea))

17:30 〜 17:45

[S2-O303-04] Direct Observation of Weak In-gap States of Cu₂O and CuO Thin Films Studied via Constant Final State Yield Spectroscopy

*Ryotaro Nakazawa¹, Manato Tateno¹, Yui Nohara², Seiji Makita³, Kiyohisa Tanaka³, Junjun Jia⁴, Yuzo Shigesato², Hisao Ishii¹ (1. Chiba Univ. (Japan), 2. Aoyama Gakuin Univ. (Japan), 3. UVSOR Synchrotron Fac. (Japan), 4. Waseda Univ. (Japan))

Short presentations by poster presenters (17:45 〜 18:30)

セッション情報

[S2-O303] Oral 303

[S2-O303-01 (Symposium Invited)] Ferroelectric-polarization-enhanced Oxide Thin Film Transistors for Multi-mode Sensing

[S2-O303-02] Scalable, Near Room Temperature Processed Indium Oxide and Tellurium Ultrathin Films for Complementary Metal-Oxide Semiconductor Electronics

[S2-O303-03] Room Temperature-Grown Highly Oriented p-Type Nanocrystalline Tellurium Thin-Films Transistors for Large-Scale CMOS circuits

[S2-O303-04] Direct Observation of Weak In-gap States of Cu₂O and CuO Thin Films Studied via Constant Final State Yield Spectroscopy

認証

セッション情報

[S2-O303] Oral 303

[S2-O303-01 (Symposium Invited)] Ferroelectric-polarization-enhanced Oxide Thin Film Transistors for Multi-mode Sensing

[S2-O303-02] Scalable, Near Room Temperature Processed Indium Oxide and Tellurium Ultrathin Films for Complementary Metal-Oxide Semiconductor Electronics

[S2-O303-03] Room Temperature-Grown Highly Oriented p-Type Nanocrystalline Tellurium Thin-Films Transistors for Large-Scale CMOS circuits

[S2-O303-04] Direct Observation of Weak In-gap States of Cu2O and CuO Thin Films Studied via Constant Final State Yield Spectroscopy

認証

[S2-O303-04] Direct Observation of Weak In-gap States of Cu₂O and CuO Thin Films Studied via Constant Final State Yield Spectroscopy