Oral Session

D. Electronic » [D-1] Synthesis, Processing and Characterization of Nanoscale and Functional Oxide Films -7th E-MRS & MRS-J Bilateral Symposium

[D1-O301] Oral 301

2023年12月13日(水) 10:00 〜 12:00 Session 11 (Room B-2)

Chair: Valentin Craciun (Department of Lasers, National Institute for Laser, Plasma and Radiation Physics), Tsukasa Katayama (Hokkaido University)

+全てマイスケジュールに登録

10:00 〜 10:30

[D1-O301-01 (Symposium Invited)] Development of synthesis method for single-crystal oxide flexible sheets

*Tsukasa Katayama^1,2 (1. Hokkaido Univ. (Japan), 2. JST PRESTO (Japan))

10:30 〜 10:45

[D1-O301-02] Significant Reduction in the Switching Time of Solid-State Electrochemical Thermal Transistors

*Mitsuki Yoshimura¹, Qian Yang^1,2, Zhiping Bian¹, Hiromichi Ohta³ (1. IST Hokkaido Univ. (Japan), 2. IQST Jiangsu Univ. (China), 3. RIES Hokkaido Univ. (Japan))

10:45 〜 11:00

[D1-O301-03] In-plane crystal arrangement of the VO₂ film on a chemical vapor
deposition grown hBN sheet determined by transmission electron
microscope

*Boyuan Yu¹, Shingo Genchi¹, Haobo Li^1,2, Azusa N Hattori^1,2, Satoru Fukamachi³, Hiroki Ago³, Hidekazu Tanaka^1,2 (1. SANKEN, Osaka Univ. (Japan), 2. Spintronics Research Network Division, Inst. for Open and Transdisciplinary Res. Initiatives, Osaka Univ. (Japan), 3. Global Innovation Center, Kyushu Univ. (Japan))

11:00 〜 11:15

[D1-O301-04] Self-assemble formation of vertical multilayer structures via spinodal decomposition in TiO₂-VO₂ films on glass substrates

*Yuji Muraoka¹, Kazutada Takeda², Yoshito Takemoto², Takanori Wakita¹, Takayoshi Yokoya¹ (1. Okayama Univ. RIIS (Japan), 2. Okayama Univ. Grad. Sch. Nat. Sci. Technol. (Japan))

11:15 〜 11:30

[D1-O301-05] Epitaxial Growth of Ultrawide Bandgap β-(Sc_xGa_1–x)₂O₃ Films on β-Ga₂O₃ (100) Substrate by Pulsed-Laser Deposition

*Kazuki Koreishi¹, Takuto Soma¹, Akira Ohtomo¹ (1. Tokyo Tech (Japan))

11:30 〜 11:45

[D1-O301-06] Electrical properties of Ge-doped α-Ga₂O₃ films prepared by mist-CVD method

*Takeru Wakamatsu¹, Yuki Isobe¹, Hitoshi Takane¹, Kentaro Kaneko², Katsuhisa Tanaka¹ (1. Kyoto Univ. (Japan), 2. Ritsumeikan Univ. (Japan))

セッション情報

[D1-O301] Oral 301

[D1-O301-01 (Symposium Invited)] Development of synthesis method for single-crystal oxide flexible sheets

[D1-O301-02] Significant Reduction in the Switching Time of Solid-State Electrochemical Thermal Transistors

[D1-O301-03] In-plane crystal arrangement of the VO₂ film on a chemical vapor
deposition grown hBN sheet determined by transmission electron
microscope

[D1-O301-04] Self-assemble formation of vertical multilayer structures via spinodal decomposition in TiO₂-VO₂ films on glass substrates

[D1-O301-05] Epitaxial Growth of Ultrawide Bandgap β-(Sc_xGa_1–x)₂O₃ Films on β-Ga₂O₃ (100) Substrate by Pulsed-Laser Deposition

[D1-O301-06] Electrical properties of Ge-doped α-Ga₂O₃ films prepared by mist-CVD method

認証

セッション情報

[D1-O301] Oral 301

[D1-O301-01 (Symposium Invited)] Development of synthesis method for single-crystal oxide flexible sheets

[D1-O301-02] Significant Reduction in the Switching Time of Solid-State Electrochemical Thermal Transistors

[D1-O301-03] In-plane crystal arrangement of the VO2 film on a chemical vapordeposition grown hBN sheet determined by transmission electronmicroscope

[D1-O301-04] Self-assemble formation of vertical multilayer structures via spinodal decomposition in TiO2-VO2 films on glass substrates

[D1-O301-05] Epitaxial Growth of Ultrawide Bandgap β-(ScxGa1–x)2O3 Films on β-Ga2O3 (100) Substrate by Pulsed-Laser Deposition

[D1-O301-06] Electrical properties of Ge-doped α-Ga2O3 films prepared by mist-CVD method

認証

[D1-O301-03] In-plane crystal arrangement of the VO₂ film on a chemical vapor
deposition grown hBN sheet determined by transmission electron
microscope

[D1-O301-04] Self-assemble formation of vertical multilayer structures via spinodal decomposition in TiO₂-VO₂ films on glass substrates

[D1-O301-05] Epitaxial Growth of Ultrawide Bandgap β-(Sc_xGa_1–x)₂O₃ Films on β-Ga₂O₃ (100) Substrate by Pulsed-Laser Deposition

[D1-O301-06] Electrical properties of Ge-doped α-Ga₂O₃ films prepared by mist-CVD method