Oral Session

D. Electronic » [D-1] Synthesis, Processing and Characterization of Nanoscale and Functional Oxide Films -7th E-MRS & MRS-J Bilateral Symposium

[D1-O403] Oral 403

Thu. Dec 14, 2023 4:30 PM - 6:30 PM Session 11 (Room B-2)

Chair: Katsuhisa Tanaka (Kyoto University), Andreas Klein (Technical University of Darmstadt)

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Cancelled

4:30 PM - 5:00 PM

[D1-O403-01 (Symposium Invited)] New Insights into the Conductivity Limits of Donor-Doped In₂O₃

*Andreas Klein¹, Alexander Frebel, Ann-Katrin Emmerich¹, Yaw-Yeu Cheng, Kim-Alexander Creutz¹ (1. Technical University of Darmstadt (Germany))

5:00 PM - 5:15 PM

[D1-O403-02] Size Effects and Carrier Transport in Highly Conductive W-Doped In₂O₃ Films with Thicknesses Ranging from 5 to 50 nm

*Tetsuya Yamamoto¹, Rajasekaran Palani¹, Hisao Makino¹ (1. Kochi Univ. of Tech. (Japan))

5:15 PM - 5:30 PM

[D1-O403-03] Effects of Postannealing on the Structural and Electrical Properties of W-Doped In₂O₃ Conductive Films Deposited on Glass Substrates

*Rajasekaran Palani¹, Tetsuya Yamamoto¹, Hisao Makino¹ (1. Research Institute, Kochi University of Technology (Japan))

5:30 PM - 5:45 PM

[D1-O403-04] Rapid Thermal Crystallization of H-doped InO_x for Thin Film Transistors

*Xiaoqian Wang¹, Mamoru Furuta^1,2 (1.Kochi Univ. of Tech. (Japan), 2.Kochi University of Tech. (Japan))

5:45 PM - 6:00 PM

[D1-O403-05] He Gas Effect on Nd:YAG-PLD growth of Y₂O₃ Thin Films

*Ryota Takahashi¹, Shizuka Suzuki¹, Takuro Dazai¹, Tomoharu Tokunaga², Takahisa Yamamoto² (1. Nihon University (Japan), 2. Nagoya University (Japan))

6:00 PM - 6:15 PM

[D1-O403-06] Stress and electrical resistivity evolution in sputtered ITO thin films

*Jianhui Liang¹, Jiali Zhang¹, Walt Johnson¹, Kurt Rubin¹, Jeff Reichert¹, Lia McArthur¹, Oskar Amster¹, Rémy Juttin², Blaise Cuénod² (1. KLA Corporation (United States of America), 2. EPFL (Switzerland))

6:15 PM - 6:30 PM

[D1-O403-07] High-Performance a-ITZO TFTs with High Bias Stability Enabled by Self-Aligned Passivation using a-GaO_x

*Yuhao Shi¹, Junghwan Kim^1,2, Hideo Hosono¹ (1. Tokyo Inst. of Tech. (Japan), 2. Ulsan National Inst. of Sci. & Tech. (Korea))

Session information

[D1-O403] Oral 403

[D1-O403-01 (Symposium Invited)] New Insights into the Conductivity Limits of Donor-Doped In₂O₃

[D1-O403-02] Size Effects and Carrier Transport in Highly Conductive W-Doped In₂O₃ Films with Thicknesses Ranging from 5 to 50 nm

[D1-O403-03] Effects of Postannealing on the Structural and Electrical Properties of W-Doped In₂O₃ Conductive Films Deposited on Glass Substrates

[D1-O403-04] Rapid Thermal Crystallization of H-doped InO_x for Thin Film Transistors

[D1-O403-05] He Gas Effect on Nd:YAG-PLD growth of Y₂O₃ Thin Films

[D1-O403-06] Stress and electrical resistivity evolution in sputtered ITO thin films

[D1-O403-07] High-Performance a-ITZO TFTs with High Bias Stability Enabled by Self-Aligned Passivation using a-GaO_x

Authentication

Session information

[D1-O403] Oral 403

[D1-O403-01 (Symposium Invited)] New Insights into the Conductivity Limits of Donor-Doped In2O3

[D1-O403-02] Size Effects and Carrier Transport in Highly Conductive W-Doped In2O3 Films with Thicknesses Ranging from 5 to 50 nm

[D1-O403-03] Effects of Postannealing on the Structural and Electrical Properties of W-Doped In2O3 Conductive Films Deposited on Glass Substrates

[D1-O403-04] Rapid Thermal Crystallization of H-doped InOx for Thin Film Transistors

[D1-O403-05] He Gas Effect on Nd:YAG-PLD growth of Y2O3 Thin Films

[D1-O403-06] Stress and electrical resistivity evolution in sputtered ITO thin films

[D1-O403-07] High-Performance a-ITZO TFTs with High Bias Stability Enabled by Self-Aligned Passivation using a-GaOx

Authentication

[D1-O403-01 (Symposium Invited)] New Insights into the Conductivity Limits of Donor-Doped In₂O₃

[D1-O403-02] Size Effects and Carrier Transport in Highly Conductive W-Doped In₂O₃ Films with Thicknesses Ranging from 5 to 50 nm

[D1-O403-03] Effects of Postannealing on the Structural and Electrical Properties of W-Doped In₂O₃ Conductive Films Deposited on Glass Substrates

[D1-O403-04] Rapid Thermal Crystallization of H-doped InO_x for Thin Film Transistors

[D1-O403-05] He Gas Effect on Nd:YAG-PLD growth of Y₂O₃ Thin Films

[D1-O403-07] High-Performance a-ITZO TFTs with High Bias Stability Enabled by Self-Aligned Passivation using a-GaO_x