[A1-O401] Oral 401

[A1-O401-08] Analysis of dislocation cluster generation behavior in polycrystalline Si
using twin networks

*Kazuma Torii¹, Takuto Kojima^2,5, Kentaro Kutsukake³, Hiroaki Kudo², Patricia Krenckel⁴, Stephan Riepe⁴, Noritaka Usami¹ (1. Graduate School of Engineering, Nagoya Univ. (Japan), 2. Graduate School of Informatics, Nagoya Univ. (Japan), 3. Center of Advanced Intelligence Project, RIKEN (Japan), 4. Fraunhofer Inst. (Germany), 5. National Institute of Advanced Industrial Science and Technology (Japan))

キーワード：dislocation cluster, twin crystal, twin network, silicon