How to generate dislocation clusters during cast-growth of silicon ingots?

YUTAKA OHNO

Presentation information

Oral Session

A. Fundamentals » [A-1] New Methodology for Developing Innovative Materials

[A1-O401] Oral 401

Thu. Dec 14, 2023 9:00 AM - 12:00 PM Session 5 (Room E)

Chair: Shinji Yuasa (National Institute of Advanced Industrial Science and Technology), Kiyohito Ishida (Tohoku University)

11:40 AM - 12:00 PM

[A1-O401-09] How to generate dislocation clusters during cast-growth of silicon ingots?

*YUTAKA OHNO¹, Hideto Yoshida², Tatsuya Yokoi³, Katsuyuki Matsunaga³, Kenta Yamakoshi³, Kentaro Kutsukake⁴, Takuto Kojima⁵, Hiroaki Kudo⁵, Noritaka Usami³ (1. IMR, Tohoku Univ. (Japan), 2. SANKEN, Osaka Univ. (Japan), 3. GSE, Nagoya Univ. (Japan), 4. AIP, RIKEN (Japan), 5. GSI, Nagoya Univ. (Japan))

Keywords:Grain boundaries, Silicon, dislocation sources, STEM

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