[A1-P304] Poster 304

[A1-P304-02] Defect Formation and Carrier Compensation in La₂SnO₂S₃: A First-Principles Study

*Teruya Nagafuji¹, Tomoya Gake¹, Akira Takahashi¹, Soungmin Bae¹, Fumiyasu Oba¹ (1. Laboratory for Materials and Structures, Institute of Innovative Research, Tokyo Institute of Technology (Japan))

キーワード：Layered oxychalcogenide, First-principles calculation, Defects