[A4-P401] Poster 401

[A4-P401-04] ANN Potential Analysis Of Self-Interstitial Atom Cluster Formation In Si

*Kazuki Yamanaka¹, Eiji Kamiyama², Tatsuya Yokoi³, Yusuke Noda², Koji Sueoka² (1. Graduate School of Computer Science and Systems Enginneering, Okayama Prefectural Univ. (Japan), 2. Department of Information and Communication Engineering, Okayama Prefectural Univ. (Japan), 3. Department of Materials Physics, Nagoya Univ. (Japan))

キーワード：Silicon, Point defect, ANN potential, Self-interstitial atom