[D-L204] Late Breaking News

[D-L204-10] Memory Characteristics of Antimony-doped Indium Aluminum Zinc Oxide Thin Film Transistor

*Hiroki Sekiya¹, Ryoichiro Hayasaka¹, Kenta Tanino¹, Taku Hanna¹, Motoshi Kobayashi¹ (1. ULVAC, Inc. (Japan))

Keywords:Transparent Amorphous Oxide Semiconductor, Charge-trapping, Thin Film Transistor