Reversible charge transfer and band bending at metal/oxide junction using interface combinatorial engineering

Jerome Wolfman

Presentation information

Oral Session

D. Electronic » [D-1] Synthesis, Processing and Characterization of Nanoscale and Functional Oxide Films -7th E-MRS & MRS-J Bilateral Symposium

[D1-O203] Oral 203

Tue. Dec 12, 2023 4:30 PM - 6:30 PM Session 11 (Room B-2)

Chair: stephane fusil fusil (UMR CNRS-Thales-Université Paris-Saclay), Xiao Renshaw Wang (Nanyang Technological University)

5:15 PM - 5:30 PM

[D1-O203-03] Reversible charge transfer and band bending at metal/oxide junction using interface combinatorial engineering

*Jerome Wolfman¹, Antoine Ruyter², Béatrice Négulescu¹, Mudit Upadhyay¹, Pascal Andreazza³, Julien Varignon², Adrian Chmielewski⁴, Sylvie Schamm-Chardon⁴, Robin Cours⁴, Theresa Hungria⁴, Cecile Autret¹ (1. CNRS-Univ. Tours (France), 2. CNRS-ENSI Caen (France), 3. CNRS-Univ. Orléans (France), 4. CNRS-Univ. Toulouse (France))

Keywords:Interface engineering, interfacial dipole , Schottky barrier height

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