Factors limiting growth rates and determining structure and electrical properties of Ga-doped ZnO films deposited by reactive plasma deposition with direct-current arc plasma

Hisashi Kitami

講演情報

Oral Session

D. Electronic » [D-1] Synthesis, Processing and Characterization of Nanoscale and Functional Oxide Films -7th E-MRS & MRS-J Bilateral Symposium

[D1-O402] Oral 402

2023年12月14日(木) 14:00 〜 16:15 Session 11 (Room B-2)

Chair: Tetsuya Yamamoto (Kochi University of Technology), Toshihiko Maemoto (Osaka Institute of Technology)

15:15 〜 15:30

[D1-O402-04] Factors limiting growth rates and determining structure and electrical properties of Ga-doped ZnO films deposited by reactive plasma deposition with direct-current arc plasma

*Hisashi Kitami^1,3, Junichi Nomoto², Toshiyuki Sakemi¹, Tetsuya Yamamoto³ (1. Sumitomo Heavy Industries, Ltd. (Japan), 2. National Inst. of Advanced Indus. Sci. and Tech. (AIST) (Japan), 3. Kochi Univ. of Tech. (Japan))

キーワード：Plasma diagnostics, Ion plating, Arc plasma, Zinc Oxide, Intrinsic point defects

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