[D1-P304] Poster 304

[D1-P304-25] Nonthermal Mott Resistive Switching in Ca₂RuO₄ Thin Films with Independence from the Temperature-Driven Transition Characteristics

*Atsushi Fukuchi¹, Keiji Tsubaki¹, Takayoshi Katase², Toshio Kamiya² (1. Hokkaido Univ. (Japan), 2. Tokyo Tech. (Japan))

キーワード：Metal–insulator transition, Mott memristor, Nonequilibrium transition, Ruthenium oxide, Resistive switching