Valley splitting energy in strained Si<sub>0.1</sub>Ge<sub>0.9</sub>/Ge-on-Si detected by lateral spin transport measurements

Kazuaki Kawashima

Presentation information

Oral Session

D. Electronic » [D-4] Materials and devices for spin quantum electronics and optics

[D4-O202] Oral 202

Tue. Dec 12, 2023 2:00 PM - 4:00 PM Session 2 (Room C-2)

Chair: Kohei Hamaya ( Osaka University), Akira Oiwa (Osaka University)

3:00 PM - 3:15 PM

[D4-O202-04] Valley splitting energy in strained Si_0.1Ge_0.9/Ge-on-Si detected by lateral spin transport measurements

*Kazuaki Kawashima¹, Takuya Okada¹, Michihiro Yamada^2,3, Takahiro Naito¹, Youya Wagatsuma⁴, Kentarou Sawano⁴, Kohei Hamaya^1,2,5 (1. Grad. Sch. Eng. Sci., Osaka Univ. (Japan), 2. CSRN, Osaka Univ. (Japan), 3. JST PRESTO (Japan), 4. Tokyo City Univ. (Japan), 5. OTRI, Osaka Univ. (Japan))

Keywords:spintronics, spin lifetime, silicon germanium, strain

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Presentation information

[D4-O202] Oral 202

[D4-O202-04] Valley splitting energy in strained Si0.1Ge0.9/Ge-on-Si detected by lateral spin transport measurements

[D4-O202-04] Valley splitting energy in strained Si_0.1Ge_0.9/Ge-on-Si detected by lateral spin transport measurements