[D4-O203] Oral 203

[D4-O203-05] Contrast change of quantum interference effects by gating in (001) and (113) GaAs/AlGaAs quantum wells

*Taizo Kawano¹, Katsushi Hahimoto², Michael Prager³, Dieter Schuh³, Dominique Bougeard³, Daisuke Iizasa¹, Michael Kammermeier¹, Jun Ishihara¹, Shutaro Karube⁴, Chaoliang Zhang⁵, Makoto Kohda^1,6,7,8 (1. Dept. of Mat. Sci., Tohoku Univ. (Japan), 2. Dept. of Sci., Tohoku Univ. (Japan), 3. Dept of Phys., Univ. Regensburg (Germany), 4. ICR, Kyoto Univ. (Japan), 5. Dept of Appl. Phys., Tohoku Univ. (Japan), 6. CSIS, Tohoku Univ. (Japan), 7. FRiD, Tohoku Univ. (Japan), 8. QUARC, QST (Japan))

Keywords:Spintronics, Persistent spin helix, Spin-orbit intraction, Quantum interference effect, Two-dimensional electron gas