[G4-O403] Oral 403

[G4-O403-02] Study On The Resistive Switching Behavior In Fe-doped Pectin Based RRAM Device

*Zhong-chen Fan¹, Hwai-En Lin¹, Yu-Hsun Su², Po-Wei Chi², Phllip M. Wu³, Maw-Kuen Wu² (1. National Taipei University of Technology (Taiwan), 2. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (Taiwan), 3. Institute of Materials Science and Engineering, National Taipei University of Technology (Taiwan))

Keywords:Filament, Resistive Memory, Resistive switching, Pectin