[G4-O403] Oral 403

[G4-O403-02] Study On The Resistive Switching Behavior In Fe-doped Pectin Based RRAM Device

*Zhong-chen Fan¹, Hwai-En Lin¹, Yu-Hsun Su², Po-Wei Chi², Phllip M. Wu³, Maw-Kuen Wu² (1. National Taipei University of Technology (Taiwan), 2. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (Taiwan), 3. Institute of Materials Science and Engineering, National Taipei University of Technology (Taiwan))

キーワード：Filament, Resistive Memory, Resistive switching, Pectin