[S2-O201] Oral 201

[S2-O201-03] DFT prediction and experimental verification of possibility of ion-exchange reactions in wurtzite-type ternary oxide semiconductors applicable to optoelectronic devices in a wide wavelength regions

*Issei Suzuki¹, Takahisa Omata¹ (1. Tohoku Univ. (Japan))

キーワード：Oxide semiconductors, Ion exchange reaction, optoelectronic materials, DFT