Strong Dependence of Solid-Phase Crystallization Atmosphere on the Performance of In<sub>2</sub>O<sub>3</sub>:H Thin Film Transistors

Yusaku Magari

Presentation information

Oral Session

S. Co-Sponsored Topics » [S-2] 9th International Symposium on Transparent Conductive Materials & 13th International Symposium on Transparent Oxide and Related Materials for Electronics and Optics (TCM-TOEO 2023)

[S2-O202] Oral 202

Tue. Dec 12, 2023 2:00 PM - 4:00 PM Session 1 (Room C-1)

Chair: Daniel Gloess (Fraunhofer FEP), David Samuel Ginley (NREL)

3:00 PM - 3:15 PM

[S2-O202-03] Strong Dependence of Solid-Phase Crystallization Atmosphere on the Performance of In₂O₃:H Thin Film Transistors

*Yusaku Magari¹, Prashant Ghediya¹, Yuqiao Zhang^2,3, Yasutaka Matsuo¹, Mamoru Furuta⁴, Hiromichi Ohta¹ (1. Hokkaido Univ. (Japan), 2. Jiangsu Univ. (China), 3. Foshan Instit. for New Materials (China), 4. Kochi Univ. of Tech. (Japan))

Keywords:In2O3:H, Solid-phase crystallization, Thin film transistors, High mobility

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Presentation information

[S2-O202] Oral 202

[S2-O202-03] Strong Dependence of Solid-Phase Crystallization Atmosphere on the Performance of In2O3:H Thin Film Transistors

[S2-O202-03] Strong Dependence of Solid-Phase Crystallization Atmosphere on the Performance of In₂O₃:H Thin Film Transistors