[S2-O303] Oral 303

[S2-O303-02] Scalable, Near Room Temperature Processed Indium Oxide and Tellurium Ultrathin Films for Complementary Metal-Oxide Semiconductor Electronics

*Chun Yuen Ho^1,2,3, I. K. M. Reaz Rahman^1,2, Shu Wang^1,2,4, Morten Madsen³, Ali Javey^1,2 (1. Electrical Engineering and Computer Sciences, Univ. of California, Berkeley (United States of America), 2. Materials Sciences Division, Lawrence Berkeley National Lab. (United States of America), 3. Centre for Advanced Photovoltaics and Thin-Film Energy Devices, Mads Clausen Inst., Univ. of Southern Denmark (Denmark), 4. Department of Materials Sci. and Engineering, Univ. of California, Berkeley (United States of America))

キーワード：complementary metal-oxide semiconductor, indium oxide, tellurium, Gaussian heterojunction transistor