[S2-P304] Poster 304

[S2-P304-33] Interfacial Ferroelectricity Enabling Modulation of Ion Penetration in Electrolyte-gated Artificial Synapse

*Minho Jin¹, Jae Hak Lee^1,2, Haeyeon Lee¹, Jiyeon Kim¹, Jiho Lee¹, Chan Lee¹, Jong Chan Shin¹, Wonho You^1,2, Hyunkyu Yang¹ (1. Seoul National Univ. (Korea), 2. Samsung Display Co., Ltd. (Korea))

キーワード：ferroelectric polymer, artificial synapse, neuromorphic computing, electrolyte-gated transistor