[A3-P401] Poster 401

[A3-P401-30] Local atomic arrangement around doped nitrogen in 4H-SiC using photoelectron holography

*Yuta Yamamoto¹, Yusuke Hashimoto¹, Koji Kimura², Koichi Hayashi², Peter Wellmann³, Tomohiro Matsushita¹ (1. Nara Institute and Science of Technology (Japan), 2. Nagoya Institute of Technology (Japan), 3. Friedrich-Alexander-Universität Erlangen-Nürnberg (Germany))

キーワード：SiC, local atomic arrangement, dopant,, photoelectron holography