[S2-O201] Oral 201

[S2-O201-02 (Symposium Invited)] Development of p-type and Ambipolar Wide Gap Oxides by Electronic Band Structure Engineering

*KIN MAN Yu^1,2 (1. City University of Hong Kong (Hong Kong), 2. Lawrence Berkeley National Lab (United States of America))

キーワード：wide bandgap oxides, p-type and ambipolar conducting, band structure engineering, alloying, doping