[A4L-D] S5.10-3

[A4L-D-04] Tunnel Conductance Modeling of Spintronics Devices Based on Device Temperature Dynamics

*Yushi Kikuchi², Yoshihiko Horio², Shunsuke Fukami², Hiroyasu Ando¹ (1. Advanced Institute for Materials Research, Tohoku University, 2. Research Institute of Electrical Communication, Tohoku University)

キーワード：Spintronics Device, Dynamics, Neural Network