[ThF1] Semiconductor Lasers

[ThF1-4] Mode Crosstalk Improvement of Active-MMI Mode Selective Laser Diode using Slit Structure

〇Shingo Murakami, Tomotaka Mori, Bingzhou Hong, Haisong Jiang, Kiichi Hamamoto (Kyushu Univ., Japan)

Keywords:Advanced Active Devices, Semiconductor lasers, Novel Materials and Structures

Slit structure is proposed to achieve stable 1^st order mode emission for mode selective LD. As a result, 3.6dB improvement in mode XT is confirmed in the actually implemented device, compared to those without slit one.