10:15 〜 10:30
[ThF1-4] Mode Crosstalk Improvement of Active-MMI Mode Selective Laser Diode using Slit Structure
キーワード：Advanced Active Devices, Semiconductor lasers, Novel Materials and Structures
Slit structure is proposed to achieve stable 1st order mode emission for mode selective LD. As a result, 3.6dB improvement in mode XT is confirmed in the actually implemented device, compared to those without slit one.
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