[TuE3] PDs and VCSELs

[TuE3-5] Directly Modulated, 40Gb/s@25C & 28Gb/s@85C 850 nm Multimode VCSELs for 100GBE, DCI & Green Photonics

〇Babu Dayal Padullaparthi^1,2,3,4, Robert Chen², Jiarui Fei², Yang Yu², Albert Tan², Zhen Dong Ning³, Feng Lin^2,3,4, Vincent Tsai², Jimmy Cheng^2,3,4, Shinichi Shioi^2,5, Mitsuharu Nagaoka^2,5, Keita Nakayama^2,5 (¹Sanan Optoelectronics HK Co Ltd, Hong Kong, ²Xiamen Sanan Integrated Circuit Co Ltd, China, ³Tianjin Sanan Optoelectronics Co.Ltd, China, ⁴Sanan Advanced Optical Technologies Ltd, USA, ⁵Sanan Japan Technology Corporation, Japan)

Keywords:Semiconductor Lasers, VCSELs, Datacom

We demonstrate high performance volume manufacturable 28Gb/s 850nm VCSELs with 3.0 mA at 85C, 100m@OM4 at 25C and 40Gb/s VCSELs at 25C with energy dissipation rate of ~224fJ/bit without multiple oxide layers, and shortest cavity.