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[TuP4-D6] Investigation of Breakdown Voltage Characteristics of InGaAs/InAlAs Single Photon Avalanche Diodes
キーワード：photodetectors
We present a temperature dependence study of InGaAs/InAlAs single photon avalanche diode. The breakdown voltage as a function of temperature exhibits two slope behavior. The temperature coefficient is sensitive to the avalanche region. We have excluded the issue of imperfect sidewall. However, the physics behind needs further investigation.
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