[WD2] III-V and Hybrid Active Devices

[WD2-4] Study on the Optical Damage Mechanism of InP IQ Modulators Using a Step Stress Test

〇Hajime Tanaka, Tsutomu Ishikawa, Mitsuru Ekawa (Sumitomo Electric Industries, Ltd., Japan)

Keywords:Optical modulators

We reported that optical damage to InP-based modulators occurred when photocurrent density at the entrance of an electrode exceeded threshold current density. This value was independent of optical power, wavelength and device temperature.