12:00 〜 12:15
[WD2-4] Study on the Optical Damage Mechanism of InP IQ Modulators Using a Step Stress Test
キーワード：Optical modulators
We reported that optical damage to InP-based modulators occurred when photocurrent density at the entrance of an electrode exceeded threshold current density. This value was independent of optical power, wavelength and device temperature.
Manuscript password authentication.
Password is required to view the manuscript. Please enter a password to authenticate.