OECC/PSC 2019

Presentation information

Oral Sessions

O4. Optical Active Devices and Modules

[WD3] Ge-based Receivers

Wed. Jul 10, 2019 2:00 PM - 3:00 PM Room D (414, 4F, Fukuoka International Congress Center)

Presider: Andreas Beling (University of Virginia, USA)

2:00 PM - 2:30 PM

[WD3-1] Ge Epitaxial Layers on Si for Group-IV Integrated Photonics

Invited

〇Yasuhiko Ishikawa (Toyohashi Univ. of Technology, Japan)

Keywords:Si/Ge, Photodetectors, Photonic integration, Novel photonic materials for active devices

Photonic device technologies utilizing Ge epitaxial layers on Si are presented. Near-infrared pin photodetectors are successfully integrated with Si optical waveguides. Band-engineered Ge layers are also presented toward higher-performance photonic devices.

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