[WD3] Ge-based Receivers

[WD3-1] Ge Epitaxial Layers on Si for Group-IV Integrated Photonics

Invited

〇Yasuhiko Ishikawa (Toyohashi Univ. of Technology, Japan)

キーワード：Si/Ge, Photodetectors, Photonic integration, Novel photonic materials for active devices

Photonic device technologies utilizing Ge epitaxial layers on Si are presented. Near-infrared pin photodetectors are successfully integrated with Si optical waveguides. Band-engineered Ge layers are also presented toward higher-performance photonic devices.