[WD3] Ge-based Receivers

[WD3-3] Receiver Characteristics of 4ch Transceiver Module with Si Photonics Integrated Chip Suitable for TWDM-PON ONU

〇Hideki Ono^1,2, Hideaki Okayama^1,2, Yosuke Onawa^1,2, Isao Tamai^1,2, Hiroyuki Takahashi^1,2, Satoshi Miyamura^1,2, Tatsushi Hasegawa^1,2, Masanori Itoh², Daisuke Shimura^1,2, Hiroki Yaegashi^1,2, Hironori Sasaki^1,2 (¹Photonics Electronics Technology Research Association (PETRA), Japan, ²Oki Electric Industry Co., Ltd., Japan)

Keywords:TWDM-PON, Photonic integrated circuits, Advanced Passive Devices, Photodetectors

The prototype 4-channel transceiver module equipped with Si photonics integrated chip with polarization diversity and evanescent-coupled waveguide lateral p-i-n Ge PDs was fabricated, and its applicability to a TWDM-PON ONU receiver was experimentally demonstrated.