[WP4-D] Poster Session 2

[WP4-D5] Lasing Characteristics of GaInAsP SCH MQW High-mesa Laser on Silicon Substrate

〇Koki Tsushima, Kazuki Uchida, Xu Han, Hirokazu Sugiyama, Masaki Aikawa, Natsuki Hayasaka, Masaki Matsuura, Takahiro Ishizaki, Takuto Shirai, Kazuhiko Shimomura (Sophia Univ., Japan)

Keywords:Si photonic and heterogeneous platform

Successful room temperature lasing of GaInAsP SCH MQW high-mesa LD on silicon substrate was demonstrated. Laser structure was grown on wafer bonded InP-Si substrate by MOVPE and high-mesa structure was fabricated by photolithography and etching.