[WP4-D] Poster Session 2

[WP4-D5] Lasing Characteristics of GaInAsP SCH MQW High-mesa Laser on Silicon Substrate

〇Koki Tsushima, Kazuki Uchida, Xu Han, Hirokazu Sugiyama, Masaki Aikawa, Natsuki Hayasaka, Masaki Matsuura, Takahiro Ishizaki, Takuto Shirai, Kazuhiko Shimomura (Sophia Univ., Japan)

キーワード：Si photonic and heterogeneous platform

Successful room temperature lasing of GaInAsP SCH MQW high-mesa LD on silicon substrate was demonstrated. Laser structure was grown on wafer bonded InP-Si substrate by MOVPE and high-mesa structure was fabricated by photolithography and etching.