[WP4-D] Poster Session 2

[WP4-D6] Template Thickness Dependence of GaInAsP MQW Laser Diode Grown on Directly Bonded InP/Si Substrate

〇Takuto Shirai, Xu Han, Masaki Matsuura, Takahiro Ishizaki, Kouki Tsushima, Kazuhiko Shimomura (Sophia Univ., Japan)

キーワード：Si photonic and heterogeneous platform

We have fabricated MQW LD grown on directly bonded InP/Si substrate using MOVPE where the thickness of InP template was 1.0μm and 1.5μm. We have compared the lasing characteristics by the difference of template thickness.