[WP4-D] Poster Session 2

[WP4-D7] Lasing Characteristics of GaInAsP SCH-MQW Laser Diode on Directly-bonded InP/Si Substrate

〇Takahiro Ishizaki, Kazuki Uchida, Hirokazu Sugiyama, Xu Han, Natsuki Hayasaka, Masaki Aikawa, Masaki Matsuura, Koki Tsushima, Takuto Shirai, Kazuhiko Shimomura (Sophia Univ, Japan)

Keywords:Si photonic and heterogeneous platform

Successful room temperature lasing of GaInAsP SCH-MQW LD grown on directly-bonded InP/Si substrate was obtained. Threshold current density at 20 ℃ was 1.5 kA/cm².