[WP4-D] Poster Session 2

[WP4-D7] Lasing Characteristics of GaInAsP SCH-MQW Laser Diode on Directly-bonded InP/Si Substrate

〇Takahiro Ishizaki, Kazuki Uchida, Hirokazu Sugiyama, Xu Han, Natsuki Hayasaka, Masaki Aikawa, Masaki Matsuura, Koki Tsushima, Takuto Shirai, Kazuhiko Shimomura (Sophia Univ, Japan)

キーワード：Si photonic and heterogeneous platform

Successful room temperature lasing of GaInAsP SCH-MQW LD grown on directly-bonded InP/Si substrate was obtained. Threshold current density at 20 ℃ was 1.5 kA/cm².