Oral Session 2

2019年4月24日(水) 10:00 〜 11:45 411+412 (Pacifico Yokohama Conference Center)

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10:00 〜 10:30

[LEDIA-2-01] MicroLED Display -- the Next Generation Display Technology

*Yun-Li Li¹ (1. PlayNitride Inc.)

10:30 〜 11:00

[LEDIA-2-02] Fabrication of neural optical probe using GaN-based blue micro LEDs

*Hiroto Sekiguchi^1,2, Hiroki Yasunaga¹, Keisuke Yamane¹, Akihiro Wakahara¹ (1. Toyohashi University of Technology, 2. JST-PRESTO)

11:00 〜 11:15

[LEDIA-2-03] Cathodoluminescence enhancement in InGaN/GaN multi-quantum shell/GaN nanowires core structure by using AlGaN undershells

*Weifang Lu¹, Nanami Goto¹, Naoki Sone^1,3, Kazuyoshi Iida^1,4, Atsushi Suzuki¹, Hedeki Murakami¹, Mizuki Terazawa¹, Kyohei Nokimura¹, Minoru Tekebayashi¹, Masaki Oya⁴, Motoaki Iwaya ¹, Tetsuya Tekeuchi¹, Satoshi Kamiyama¹, Isamu Akasaki^1,2 (1. Department of Materials Science and Engineering, Meijo University, 2. Akasaki Research Center, Nagoya University, 3. Koito Manufacturing CO., LTD, 4. Toyoda Gosei CO., LTD)

11:15 〜 11:30

[LEDIA-2-04] Cathodoluminescence characteristics of Indium-rich InGaN film

*Bowen Sheng^1,2, Xiantong Zheng¹, Ping Wang¹, Gordon Schmidt², Frank Bertram², Peter Veit², Juergen Blaesing², Zhaoying Chen¹, Andre Strittmatter², Juergen Christen², Bo Shen¹, Xinqiang Wang¹ (1. State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, 100871 Beijing, China, 2. Institute of Physics, Otto-von-Guericke-University Magdeburg, 39106 Magdeburg, Germany)

11:30 〜 11:45

[LEDIA-2-05] Exploring the growth procedures for polar-plane-free faceted InGaN-LED structures

*Yoshinobu Matsuda¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1. Kyoto University)