Oral Session 6

2019年4月25日(木) 10:45 〜 12:00 411+412 (Pacifico Yokohama Conference Center)

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10:45 〜 11:15

[LEDIA-6-01] Electron-beam pumped deep ultraviolet light sources based on ultrathin GaN quantum wells in AlN matrix

*Xinqiang Wang¹, Y. Wang¹, S.V. Ivanov², T. Wang¹, B. Sheng¹, S. Guo³, H. Miyake⁴, V.I. Kozlovsky⁵, M.M. Zverev⁶, F. Bertram⁷, H. Li³, X. Rong¹, Z.X. Qin¹, J. Christen⁷, B. Shen¹ (1. Peking University, 2. Ioffe Institute, 3. Advanced Micro-Fabrication Equipment Inc, 4. Mie University, 5. Russia Academy of Science, 6. Moscow Technological University, 7. Otto-von-Guericke-University Magdeburg)

11:15 〜 11:30

[LEDIA-6-02] Monitoring of nitrogen content in Ga-Na melt by electrical resistance measurement on Sodium-Flux method

*Ricksen Tandryo¹, Kosuke Murakami¹, Takumi Yamada¹, Tomoko Kitamura¹, Masayuki Imanishi¹, Masashi Yoshimura¹, Yusuke Mori¹ (1. Osaka University)

11:30 〜 11:45

[LEDIA-6-03] Lateral current distribution in GaN-based VCSELs with conducting AlInN/GaN DBRs

*Ryosuke Iida¹, Wataru Muranaga¹, Syo Iwayama¹, Tetsuya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1. Meijo University, 2. Nagoya University)

11:45 〜 12:00

[LEDIA-6-04] In-situ curvature monitoring of AlInN/GaN DBRs

*Kei Hiraiwa¹, Wataru Muranaga¹, Sho Iwayama¹, Tetusya Takeuchi¹, Satoshi Kamiyama¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1. Meijo University, 2. Akasaki Research Center, Nagoya University)