Oral Session 7

[LEDIA-7-02] Raman Scattering Investigation of Strain Evolution during Surface-Activated Bonding of GaN and Removal of Si substrate

*Ryo Tanabe¹, Takuya Onodera¹, Masahiro Uemukai¹, Toshiki Hikosaka², Shinya Nunoue², Kanako Shojiki³, Hideto Miyake^3,4, Maki Kushimoto⁵, Heajeong Cheong⁶, Yoshio Honda⁶, Hiroshi Amano⁶, Ryuji Katayama¹ (1. Grad. School of Eng., Osaka Univ., 2. Toshiba Corporation, 3. Grad. School of Eng., Mie Univ., 4. Grad. School of RIS., Mie Univ., 5. Grad. School of Eng., Nagoya Univ., 6. Nagoya Univ.IMaSS)