Schedule 2 3:50 PM - 5:00 PM [LEDIA-P-23] Growth of lattice-relaxed InGaN thick films by tri-halide vapor phase epitaxy *Kentaro Ema1, Rio Uei1, Mitsuki Kawabe1, Hisashi Murakami1, Yoshinao Kumagai1, Akinori Koukitu1 (1. Tokyo University of Agriculture and Technology)
