Short Oral Session

[LEDIA-P-22] Relation of leakage at a forward bias to photoluminescence intensity and photovoltaic properties for GaN-based light-emitting diodes

*Jongseok Kim¹, HyungTae Kim¹, Seungtaek Kim¹, Won-Jin Choi², Hyundon Jung³ (1. Korea Institute of Industrial Technology, 2. RayIR, 3. Etamax)