Session information

LEDIA2020

Oral Presentation

Crystal Growth

Tue. Apr 21, 2020 3:30 PM - 5:00 PM 411+412 (Conference Center)

Session Chair: Rie Togashi(Sophia University)

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4:00 PM - 4:15 PM

[LEDIA4-02] Regrowth of Li-free layer on GaN substrate produced by the Na-flux-sapphire-dissolution technique

*Takumi Yamada¹, Masayuki Imanishi¹, Kosuke Murakami¹, Kosuke Nakamura¹, Masashi Yoshimura¹, Yusuke Mori¹ (1. Osaka University)

4:15 PM - 4:30 PM

[LEDIA4-03] Correlation between Etch Pit Size and Threading Dislocation Propagation Habit in GaN Substrate Observed by Multiphoton-Excitation Photoluminescence

*Mayuko Tsukakoshi¹, Tomoyuki Tanikawa¹, Masahiro Uemukai¹, Ryuji Katayama¹ (1. Osaka University)

4:30 PM - 4:45 PM

[LEDIA4-04] Control of the lattice relaxation of the InGaN layer grown on patterned sapphire substrates using Tri-Halide Vapor Phase Epitaxy

*Kentaro Ema¹, Ryohei Hieda¹, Hisashi Murakami¹, Akinori Koukitu¹ (1. Tokyo University of Agriculture and Technology)

4:45 PM - 5:00 PM

[LEDIA4-05] Withdrawn

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