High average power lasers and applications

[ALPS10-01(Invited)] 272 nm deep-ultraviolet laser diode fabricated on high-quality AlN substrate

*Chiaki Sasaoka¹, Ziyi Zhang^1,2, Maki Kushimoto¹, Tadayoshi Sakai¹, Naoharu Sugiyama¹, Leo John Schowalter^1,3, Hiroshi Amano¹ (1. Nagoya University, 2. Asahi Kasei Corporation, 3. Crystal IS)