[LEDIA5-04] Improvement of photosensitivity of AlGaN/GaInN/GaN-based HFET photosensor by using short optical p-GaN gate
*Yuya Yamada1, Ryo Fujishima1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Isamu Akasaki1,2(1. The University of Meijo, 2. Akasaki Reserch Center, Nagoya Univ.)